Fabrication of solution-processable OFET memory using a nano-floating gate based on a phthalocyanine-cored star-shaped polymer
نویسندگان
چکیده
A simple one-pot solution-processed OFET memory device has been fabricated based on the vertical phase separation of phthalocyanine-cored star-shaped polystyrene and an organic semiconductor.
منابع مشابه
High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites
UNLABELLED Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plas...
متن کاملAdditive-driven assembly of block copolymer-nanoparticle hybrid materials for solution processable floating gate memory.
Floating gate memory devices were fabricated using well-ordered gold nanoparticle/block copolymer hybrid films as the charge trapping layers, SiO(2) as the dielectric layer, and poly(3-hexylthiophene) as the semiconductor layer. The charge trapping layer was prepared via self-assembly. The addition of Au nanoparticles that selectively hydrogen bond with pyridine in a poly(styrene-b-2-vinyl pyri...
متن کاملGraphene nano-floating gate transistor memory on plastic.
A transparent flexible graphene nano-floating gate transistor memory (NFGTM) device was developed by combining a single-layer graphene active channel with gold nanoparticle (AuNP) charge trap elements. We systematically controlled the sizes of the AuNPs, the thickness of the tunneling dielectric layer, and the graphene doping level. In particular, we propose that the conductance difference (i.e...
متن کاملA Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
A novel gate-all-around (GAA) poly-Si nanowire (NW) floating gate (FG) memory device was fabricated and characterized. The enhanced electric field around the corners of the nanowire channels boosts the P/E process and thus the operation voltages are dramatically lowered. Furthermore, the non-localized trapping feature characteristic of the FG makes the injection or ejection of electrons easier ...
متن کاملTunnel conductivity switching in a single nanoparticle-based nano floating gate memory
Nanoparticles (NPs) embedded in a conductive or insulating matrix play a key role in memristors and in flash memory devices. However, the role of proximity to the interface of isolated NPs has never been directly observed nor fully understood. Here we show that a reversible local switching in tunnel conductivity can be achieved by applying an appropriate voltage pulse using the tip of a scannin...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials advances
سال: 2022
ISSN: ['2633-5409']
DOI: https://doi.org/10.1039/d1ma01081f